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Quanta 3D FEG

The FEI Quanta 3D is a dual-beam (SEM/FIB) system with both e-beam mode and ion-beam mode. Besides all functions for a standard SEM, the Q3D is also capable using ion beam to form images and cut samples.

The capabilities of this system include:

SEM Mode Functions:

  • Regular SEM functions including both SE and BSE images, with 3.0nm resolution at 30 kV
  • Low vacuum SEM mode the allows existence of moderate moisture in the chamber for improved conductivity without Au coating
  • Back scattered electron diffraction (BSED) to analyze crystal structures and map crystal type, grain size, as well as crystal orientations
  • EDS spectrum and EDS mapping

Unique SEM Functions:

  • Extended low vacuum SEM mode (ESEM, environmental SEM mode) that allows introduction of external gases (e.g. water vapor)
  • High-temperature SEM mode up to 800 <sup>o</sup>C with heated sample stage
  • E-beam lithography
  • E-beam assisted deposition of Pt, or W. (a pattern can be defined or uploaded and the Pt- or W- deposition will follow the pattern as defined.)

FIB mode Functions:

  • Regular ion-beam imaging using SE detector with 7 nm resolution at 30 kV
  • Advantages of e-beam image: 1) use smaller current than e-beam, reduced charging issue; 2) strong contract in channeling effect, with better contract in grain orientations.
  • Cutting trenches or patterns with FIB (a pattern can be defined or uploaded and the Pt- or W- deposition will follow the pattern as defined.)
  • Ion beam assisted Platinum deposition (a pattern can be defined or uploaded and the Pt- or W- deposition will follow the pattern as defined.)
  • Ion beam assisted Tungsten deposition (a pattern can be defined or uploaded and the Pt- or W- deposition will follow the pattern as defined.)
  • FIB sectioning for in situ SEM cross-section
  • FIB sectioning for TEM sample prep.

Examples of nanofabrication capabilities:

  • Fabrication of nanowire-based or nanotube-based devices, e.g. to measure electron current through a nanowire;
  • Fabrication of micron-/nano- trench based devices such as nanofluidic devices
  • E-beam lithography
  • Fabrication of grating or prototype mask
  • AFM tip modification
  • Photonic or phononic array fabrication
  • Nano stamping
  • MEMS modification and wiring
  • In situ repair of microelectronic devices

E-beam Optics:

  • Electron Source: FEG,
  • Accelerating voltage: 30 kV
  • Beam current: to 20 nA in 21 steps
  • Max Field of view: (the width of the largest area to see at lowest mag)

Detectors and Attachments:

  • Everhardt-Thornley SED
  • Low-vacuum SED (used in low vacuum)
  • Gaseous SED (GSED) (used in ESEM mode)
  • Solid-State BSED
  • Gaseous analytical BSED (GAD) (used for low-vacuum analytical applications)
  • EDS: Oxford silicon drift detector (50 mm<sup>2</sup>) and INCA software
  • HKL EBSD (Electron Backscatter Diffraction) systems

E-beam Optics:

  • Ion beam Source:Ga LMIS (liquid metal ion source)
  • Accelerating voltage: 30 kV
  • Beam current: 2 pA to 65 nA in 15 steps
  • Max Field of view: (the width of the largest area to see at lowest mag)

Sample stage capability:

  • Fits large sample: 1.5  x 3.0 400m
  • samples size, or larger if no rotation is needed.
  • Max movement of sample stage: X = + - 20 mm; Y = + - 40 mm
  • Stage Tilt angle: -20 degrees to + 75 degrees

Location

Northrop Hall Room B06

Scheduling

To schedule time on this instrument or to learn more about its capabilities and user fees, etc. please contact:

Adrian Brearley
Distinguished Professor, Earth and Planetary Sciences
Director, Nanomaterials Characterization Facility
505 507 0448
brearley@unm.edu